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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD801 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) *Low Saturation Voltage *Complement to Type BD802 APPLICATIONS *Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 100 UNIT V Collector Current-Continuous Base Current-Continuous w w scs .i w 100 5 8 3 65 150 -55~150 .cn mi e V V A A PC Tj Tstg Collector Power Dissipation TC=25 Junction Temperature Storage Ttemperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.92 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 100mA; IB= 0 IC= 3A; IB= 0.3A B BD801 MIN 100 TYP. MAX UNIT V 1 1.6 0.1 1 30 15 3 V V mA mA IC= 3A ; VCE= 2V VCB= 100V; IE= 0 VEB= 5V; IC= 0 w w. w .cn mi cse is IC= 1A ; VCE= 2V IC= 3A ; VCE= 2V IC= 0.25A ;VCE= 10V,ftest= 1MHz MHz isc Websitewww.iscsemi.cn |
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